Ning Li, male, born in October 1968, is a member of the Jiusan Society and doctor of science. He is currently a research fellow and doctoral supervisor at the Shanghai Institute of Technical Physics, Chinese Academy of Sciences.

He is dedicated to researching the mechanism, process preparation, testing and analysis of infrared photoelectric devices made from Group III-V materials. His main research interests are GaAs/AlGaAs quantum well infrared detectors and their focal plane devices and other infrared photoelectric devices. In 2000, he became the first in China to successfully develop 64´64 GaAs/AlGaAs multiple quantum well infrared hybrid linear array detector components and obtain the thermograms of objects at room temperatures. In 2005, he developed 256×1 VLW (peak wavelength of 15 μm) linear quantum well infrared focal plane devices. In addition, research on 1.3 μm InGaAs avalanche photodiodes (APDs), quantum dot infrared photodetectors (QDIP), 12 μm two-color quantum well devices and p-type GaAs/AlGaAs quantum well infrared detectors has been carried out. Currently, he mainly participates in the "Research on Single-photon Detection Principles and Technology" sub-project of the special quantum control project "Quantum Information Processing Based on Cold Atoms and Quantum Dots".

He was funded by the Shanghai Rising-Star Program in 2003, and received the first prize of Shanghai Natural Science Award for his research achievement "Research on Localization Mechanisms and Control in Infrared Detection Effect and Its Applications" in 2007.